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Moving Beyond the Limitations of Silicon

The unmatched reliability and performance of GaN power semiconductors is accelerating revolutionary advances in critical

spaceborne systems. Learn more about why GaN is displacing silicon in space applications

What is Radiation-Hardened Gallium Nitride?

Radiation-hardened electronics, referred to as RadHard, are electronic components that are designed and produced to be immune to the damaging exposure of radiation and extreme temperatures found in rugged environments, such as space. Unlike silicon-based technology, where special processing is required to protect the semiconductor against the total ionizing dose (TID) of the effects of radiation, the physical properties and construction of gallium nitride (GaN) devices make it relatively immune to the damage caused by such radiation in space. Regarding Single Event Effects (SEE), both silicon and GaN require special processing to be immune. There are three primary types of radiation that devices in orbit are subject to: gamma radiation, neutron radiation and heavy ion bombardment. Gamma Radiation – eGaN Transistors In enhancement mode GaN (eGaN®) devices, all three terminals; gate, source, and drain, are located on the top surface. Like in a silicon MOSFET, conduction between source and drain is modulated by biasing the gate electrode from zero volts to a positive voltage – usually 5 V. In the eGaN device, the gate is separated from the underlying channel by an aluminum gallium nitride layer. This layer does not accumulate charge when subjected to gamma radiation and therefore GaN devices do not experience the charge ‘trapping’ effect that silicon MOSFETs do when exposed to gamma radiation.

Neutron Radiation – eGaN Transistors
As with gamma radiation, the impact of neutrons on the GaN crystal and the entire device structure is minimal. The reason

for GaN’s superior performance under neutron radiation is that GaN has a much higher displacement threshold energy

compared with silicon.
Heavy Ion Bombardment (SEE) – eGaN Transistors
Single Event Effects (SEE) are caused by highly energetic heavy ions and protons/neutrons impinging on sensitive areas

within the transistor. Since eGaN devices do not have a gate oxide, they are immune to single event gate rupture (SEGR).

Because eGaN FETs do not have the parasitic bipolar junctions that exist within MOSFETs, they are also not prone to single

event upset (SEU) or single event burnout (SEB). GaN devices can however be impacted by heavy ion bombardment, which

manifests as a slow degradation in drain-source leakage as the heavy ion fluence increases. Using special processing and

design, eGaN devices can be made as immune to SEE as they are inherently immune to TID.

Why GaN in Space?

Gallium nitride (GaN) is a very hard, mechanically stable wide bandgap semiconductor. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable option for space applications. Radiation in Space There are several types of radiation experienced by semiconductors in space. Devices in satellites in orbit around our earth, or in exploration satellites visiting the most distant parts of our solar system, all experience some form of high-energy radiation bombardment. Three of the primary types of radiation are gamma radiation, neutron radiation, and heavy ion bombardment. Unlike silicon, where special fabrication techniques and special packaging is needed to shield semiconductors from the effects of radiation, the physical properties and construction of GaN devices make it relatively immune to the damage caused by radiation in space.Space Applications for GaN Gallium nitride devices are used in high volume and have several years of flight heritage in many applications for space. Applications benefiting from the performance and fast deployment of these products include power supplies for satellites and mission equipment, light detection and ranging (lidar) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics and instrumentation, and ion thrusters for satellite orientation and positioning as well as interplanetary propulsion of low-mass robotic vehicles.

Satellite Power Supply

Rad Hard GaN allows power supply designers to optimize their designs for size and weight, efficiency, EMI, and power density.  The increased switching capability and reduced parasitics equate to lower losses enabling engineers to increase the switching frequency resulting in reduced size and weight of magnetic components, a reduction or elimination of heat sinking, and lower copper losses.  These benefits result in an overall reduction of system size and weight without a sacrifice to efficiency.  GaN-based power supplies operate at higher frequencies, higher efficiencies, and greater power densities for Micro, LEO, GEO satellites, along with deep space and outer space explorations.

 

Motor Drive for Satellite Reaction Wheels and Robotics

Motor Drive for Satellite Reaction Wheels and Robotics
		Reaction Wheels are a critical component for satellites as it enables them to stay orientated and reposition while in orbit.  The reaction wheel operates by controlling the rotational speed of the electric motor attached to the flywheel.  The  wide  band-gap  characteristics  of  Rad Hard GaN  power devices  allow  them  to  have  much  higher  switching  frequencies  with  considerably  lower  switching  losses providing the small size, light weight, and precision control needed to drive miniaturized  reaction  wheels  used  by  small  CubeSats. These same benefits positively impact the ruggedized high-precision brushless DC motors that are critical for the myriad of robotics and automated instrumentation used in space missions.
Autonomous Navigation and Docking
		Lidar (light distancing and ranging) systems provide the “eyes” for autonomous navigation and docking for rendezvous missions and robotics used in space. The shorter the laser beam pulse, the higher the resolution of the lidar images. Rad Hard GaN devices provide this needed speed, increase the efficiency, and shrink the size for lidar.
Ion Thrusters
		An ion thruster is a form of electric drive used for in-mission spacecraft propulsion with uses such as orientation and positioning of satellites and interplanetary propulsion of low-mass robotic vehicles. Rad hard GaN enables smaller, lighter, more efficient power supply to these systems, increasing the power delivery.

Products

   

Rad Hard GaN Packaged Discretes

EPC Space Rad Hard GaN discrete devices have been specifically designed for critical applications in the high reliability or

commercial satellite space environments. These devices have exceptionally high electron mobility and a low temperature

coefficient resulting in very low R_DS(on) values. The lateral structure of the die provides for very low gate charge (Q_G) and

extremely fast switching times. These features enable higher power densities, higher efficiencies and more compact and

lighter packaging.

Part Number	Voltage (V)	ID (A)	Max RDS(on) (mΩ)	Max QG (nC)	Package Size (mm)
FBG04N08A	40	8	28	2.8	3.4 x 3.4
FBG04N30B	40	30	10	11.4	5.7 x 3.9
EPC7019G	40	95	4	22 (typ)	8.0 x 5.6
EPC7014UB	60	1	580	0.184	3.25 x 2.74
FBG10N30B	100	30	12	11	5.7 x 3.9
FBG10N05A	100	5	45	2.2	3.4 x 3.4
EPC7018G	100	90	6	11.7 (typ)	8.0 x 5.6
FBG20N04A	200	4	130	3	3.4 x 3.4
FBG20N18B	200	18	28	7	5.7 x 3.9
EPC7007B	200	18	28	5.4	5.7 x 3.9
EPC7020G	200	80	14.5	13.5 (typ)	8.0 x 5.6
FBG30N04C	300	4	400	2.6	4.4 x 4.4

Rad Hard GaN Die on Ceramic Adaptor

The CDA series of eGaN^® switching power HEMTs from EPC Space have been specifically designed for critical applications in high reliability or

commercial satellite space environments. The die adaptor series allows easy PCB mounting for ‘plug and play’ functionality. The low R_DS(on) and very

low gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact and lighter

weight circuitry for critical space borne missions.

Part Number	Voltage (V)	ID (A)	Max RDS(on) (mΩ)	Max QG (nC)	Package Size (mm)
CDA04N08X2	40	8	16	2.8	2.3 x 1.7
CDA04N30X1	40	30	9	11.4	4.8 x 2.2
CDA10N30X1	100	30	7	11	4.8 x 2.2
CDA10N05X2	100	5	30	2.2	2.3 x 1.7
CDA20N04X4	200	4	100	3	2.3 x 1.5
CDA20N18X3	200	18	25	6	4.2 x 2.2
CDA30N04X7	300	4	400	2.6	2.5 x 2.5

Rad Hard GaN Drivers and Power Stages

EPC Space Rad Hard GaN Drivers are optimized to drive Rad Hard GaN transistors in critical spaceborne systems. Rad Hard Power Stages integrate

a high-speed gate drive circuit with power switches to provide a complete power stage in a small package. These devices are ideal for high speed

DC-DC conversion, synchronous rectification, and multi-phase motor drives.

Part Number	Description	Package Size (mm)
FBS-GAM01P-C-PSE	Single Output High-Speed eGaN® HEMT Gate Driver Development Module	12.7 x 9.5
FBS-GAM01P-R-PSE	Radiation-Hardened Single Output High-Speed eGaN® HEMT Gate Driver Module	12.7 x 9.5
FBS-GAM02P-C-PSE	50 V Multifunction Power eGaN® HEMT Gate Driver Development Module	25 x 19
FBS-GAM02P-R-PSE	50 V Radiation-Hardened Multifunction Power eGaN® HEMT Gate Driver Driver Module	25 x 19
FBS-GAM01-P-C50	50 V/12 A Single Low-Side Power Driver Development Module	19 x 9.7
FBS-GAM01-P-R50	50 V/12 A Radiation-Hardened Single Low-Side Power Driver Module	19 x 9.7
FBS-GAM01-P-C100	100 V/12 A Single Low-Side Power Driver Development Module	19 x 9.7
FBS-GAM01-P-R100	100 V/12 A Radiation-Hardened Single Low-Side Power Driver Module	19 x 9.7
FBS-GAM02-P-C50	50 V/ 10 A Multifunction Power Development Module	25 x 19
FBS-GAM02-P-R50	50 V/10 A Radiation-Hardened Multifunction Power Module	25 x 19
72-001	50 V/10 A Radiation-Hardened Multifunction Power Module Parylene Coated	25 x 19
FBS-GAM04-P-C50	50 V/10 A Dual Low-Side Power Driver Development Module	25 x 19
FBS-GAM04-P-C100	100 V/10 A Dual Low-Side Power Driver Development Module	25 x 19

Demonstration Boards

Fast prototyping and evaluation — easy-to-use demonstration boards are ideal for evaluating the features and capabilities

of EPC Space products.

Schematics, and Bills of Materials are available for all boards for quick reference and use.

Part Number	Description	Voltage (V)	Id (max) (A)	Featured Product
EPC7C001	FBS-GAM01-PSE and FBG04N30 Switching Evaluation Board	40	14.3	FBS-GAM01-PSE FBG04N30
EPC7C002	FBS-GAM01-PSE and FBG10N30 Switching Evaluation Board	100	15.3	FBS-GAM01-PSE FBG10N30
EPC7C003	FBS-GAM01-PSE and FBG20N18 Switching Evaluation Board	200	9	FBS-GAM01-PSE FBG20N18

Point of Load Evaluation Boards

Part Number	Description	VDD (max) (V)	Iout (max) (A)	fs (max) (MHz)	Featured Product
EPC7C005	FBS-GAM02-P-C50/ EPCS-GAM02A-P-C50* Point of Load Evaluation Board	50	10	1	FBS-GAM02-P-C50

Motor Drive Evaluation Boards

Part Number	Description	VDD (max) (V)	Iphase (max) (A)	fs (max) (MHz)	Featured Product	Features/Comments
EPC7C006	FBS-GAM02-P-C50/ EPCS-GAM02A-P-C50* Multiphase Motor Drive Evaluation Board	50	8	1	FBS-GAM02P-C50	• Single-, Two- and Three-Phase Motor Driver • Stand-Alone, or • Optimized Interface to EPC9147 Microcontroller Motor Control Board • Multiple User Selectable Options for Maximum Versatility • Multiple PWM Drive Options • On-Card or External 5V Bias Option • Built-In Dead Time Option • VDD and Phase Current Sense • VDD and Phase Voltage Sense • Phase Output Filter Option • Over-Temperature Protection • Power Good Sensing and Protection • Hall-Effect Sensor Inputs • Streamlines Motor Driver Development and Implementation